vishay siliconix si7478dp new product document number: 72913 s-51566-rev. b, 07-nov-05 www.vishay.com 1 n-channel 60-v (d-s) mosfet features ? trenchfet ? power mosfet new low thermal resistance powerpak ? package with lo w 1.07-mm profile 100 % r g tested applications automotive such as: - high-side switch - motor drives - 12-v boardnet product summary v ds (v) r ds(on) ( ? )i d (a) 60 0.0075 @ v gs = 10 v 20 0.0088 @ v gs = 4.5 v 18.5 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom v ie w ordering information: si7478dp-t1?e3 (lead (pb)-free) n-channel mosfe t g d s notes a. surface mounted on 1? x 1? fr4 board. b. see solder profile ( http://www.vishay.com/ppg?73257 ). the powerpak so-8 is a leadless pack age. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manu facturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. c. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 secs steady state unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 150c) a t a = 25c i d 20 15 a t a = 70c 16 12 pulsed drain current i dm 60 continuous source current (diode conduction) a i s 4.5 1.6 avalanche current i as 35 avalanche energy e as 61 mj maximum power dissipation a t a = 25c p d 5.4 1.9 w t a = 70c 3.4 1.2 operating junction and storage temperature range t j , t stg ?55 to 150 c soldering recommendations (peak temperature) b, c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 18 23 c/w steady state 52 65 maximum junction-to-case (drain) steady state r thjc 1.0 1.3 rohs compliant
www.vishay.com 2 document number: 72913 s-51566-rev. b, 07-nov-05 vishay siliconix si7478dp new product notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless noted specifications t j = 25 c, unless otherwise noted parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v, t j = 55c 5 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.006 0.0075 ? v gs = 4.5 v, i d = 18.5 a 0.007 0.0088 forward transconductance a g fs v ds = 15 v, i d = 20 a 63 s diode forward voltage a v sd i s = 4.5 a, v gs = 0 v 0.76 1.2 v dynamic b total gate charge q g v ds = 30 v, v gs = 10 v, i d = 20 a 105 160 nc gate-source charge q gs 22 gate-drain charge q gd 19 gate resistance r g 0.5 1.0 1.5 ? tu r n - o n d e l ay t i m e t d(on) v dd = 30 v, r l = 30 ? i d ? 1 a, v gen = 10 v, r g = 6 ? 25 40 ns rise time t r 20 30 turn-off delay time t d(off) 115 175 fall time t f 45 70 source-drain reverse recovery time t rr i f = 4.5 a, di/dt = 100 a/s 41 70 output characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 thru 4 v 3 v v ds - drain-to-source voltage (v) - drain current (a) i d transfer characteristics 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4. 0 25 ? c t c = 125 ? c -55 ? c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72913 s-51566-rev. b, 07-nov-05 www.vishay.com 3 vishay siliconix si7478dp new product typical characteristics 25 c, unless noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0 102030405060 v gs = 10 v - on-resistance ( r ds(on) ? ) i d - drain current (a) v gs = 4.5 v 0 2 4 6 8 10 0 20406080100120 v ds = 30 v i d = 20 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs v sd - source-to-drain voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 ? c t j = 25 ? c 60 10 1 - source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 2000 4000 6000 8000 10000 0 102030405060 c oss c iss v ds - drain-to-source voltage (v) c - capacitance (pf) c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 20 a t j - junction temperature ( ? c) r ds(on) - on-resistance (normalized) 0.000 0.004 0.008 0.012 0.016 0.020 0246810 - on-resistance ( r ds(on) ? ) v gs - gate-to-source voltage (v) i d = 20 a
www.vishay.com 4 document number: 72913 s-51566-rev. b, 07-nov-05 vishay siliconix si7478dp new product typical characteristics 25 c, unless noted threshold voltage - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature ( ? c) single pulse power, junction-to-ambient 0.01 0 10 80 100 20 600 0.1 time ( sec ) 60 40 power (w) 1 100 safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 ? c single pulse - drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 normalized thermal transient impedance, junction-to-ambient 10 - 3 10 - 2 1 10 600 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 52 ? c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72913 s-51566-rev. b, 07-nov-05 www.vishay.com 5 vishay siliconix si7478dp new product typical characteristics 25 c, unless noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?72913 . normalized thermal transient impedance, junction-to-case 10 - 3 10 - 2 1 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance
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